Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
The structure of the relaxed GaSb(110) surface has been determined by mass-resolved Rutherford backscattering of He+ ions. From measurements of ion blocking angles it is concluded that the relaxation involves a rotation of the Ga-Sb surface bond by an angle of =29°-4°+7°out of the surface plane. The bond lengths at the surface are shown to remain unchanged. The root-mean-square thermal vibration amplitude of the surface atoms is found to be enhanced with respect to the bulk amplitude by a factor of 1.50.2. © 1984 The American Physical Society.
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
A. Gangulee, F.M. D'Heurle
Thin Solid Films
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures