A. Krol, C.J. Sher, et al.
Surface Science
Ge2Sb2Te5 (GST) thin films were deposited by Atomic Layer Deposition (ALD) method using a novel alkylsilyl tellurium precursor. Film composition was studied with time-of-flight elastic recoil detection analysis (TOF-ERDA) and energy dispersive x-ray analysis. Phase change properties of the films were characterised by high-temperature X-ray diffraction and laser based crystallization measurements. Crystallization properties of ALD GST were found to be similar to sputter-deposited films. © 2009 Elsevier B.V. All rights reserved.
A. Krol, C.J. Sher, et al.
Surface Science
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry