I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter
Ge2Sb2Te5 (GST) thin films were deposited by Atomic Layer Deposition (ALD) method using a novel alkylsilyl tellurium precursor. Film composition was studied with time-of-flight elastic recoil detection analysis (TOF-ERDA) and energy dispersive x-ray analysis. Phase change properties of the films were characterised by high-temperature X-ray diffraction and laser based crystallization measurements. Crystallization properties of ALD GST were found to be similar to sputter-deposited films. © 2009 Elsevier B.V. All rights reserved.
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter
K.A. Chao
Physical Review B
M.A. Lutz, R.M. Feenstra, et al.
Surface Science
Shaoning Yao, Wei-Tsu Tseng, et al.
ADMETA 2011