Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
Using a 50 mW HeNe infrared laser as the light source and a micro channel-plate image intensifier/converter, grown-in dislocations were observed in 2 to 3 mm thick silicon (111) slices. All the dislocations imaged followed the visibility criteria set by Tanner and Fathers (1974) for pure edge dislocations. © 1979 Taylor & Francis Group, LLC.
T.N. Morgan
Semiconductor Science and Technology
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter