M. Horn-Von Hoegen, M. Copel, et al.
Physical Review B
Paper
Characterization of silicate/Si(001) interfaces
Abstract
An analysis of silicate/Si(001) interfaces was discussed. The solid-state reaction of yttria and silicon oxynitride was used to create gate dielectrics with a direct yttrium silicate-silicon interface. The complete consumption of the underlying oxide through silicate formation during high-temperature annealing was indicated by medium-energy ion scattering. The small flat-band voltage shifts, indicating low quantities of charge without passivation steps was exhibited by silicate dielectrics.
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