Huiling Shang, Sameer Jain, et al.
VLSI Technology 2012
An analysis of silicate/Si(001) interfaces was discussed. The solid-state reaction of yttria and silicon oxynitride was used to create gate dielectrics with a direct yttrium silicate-silicon interface. The complete consumption of the underlying oxide through silicate formation during high-temperature annealing was indicated by medium-energy ion scattering. The small flat-band voltage shifts, indicating low quantities of charge without passivation steps was exhibited by silicate dielectrics.
Huiling Shang, Sameer Jain, et al.
VLSI Technology 2012
H. Niehus, U.K. Köhler, et al.
Journal of Microscopy
R.M. Tromp, M. Mankos, et al.
Surface Review and Letters
T. Ando, M.M. Frank, et al.
IEDM 2009