High performance 0.25 mu m p-MOSFETs with silicon-germanium channels for 300 K and 77 K operation
- V.P. Kesan
- S. Subbana
- et al.
- 1991
- IEDM 1991
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6 results for M.J. Tejwani
Novel diffusion phenomenon of dopants in silicon at low temperatures
- M. Wittmer
- P. Fahey
- et al.
- 1991
- Physical Review Letters
Photoluminescence from pseudomorphically strained Si/Si1-xGex multiple quantum wells grown on silicon
- Stefan Zollner
- R.T. Collins
- et al.
- 1992
- SPIE Semiconductors 1992
Titanium silicide/germanide formation on submicron features for high mobility SiGe channel field effect transistors
- P. Agnello
- V.P. Kesan
- et al.
- 1994
- Journal of Electronic Materials
Ge segregation in SiGe/Si heterostructures and its dependence on deposition technique and growth atmosphere
- D.A. Grützmacher
- T.O. Sedgwick
- et al.
- 1993
- Applied Physics Letters
Characterization of Si/SiGe strained-layer superlattices grown by ultrahigh vacuum/chemical vapor deposition technique
- P.J. Wang
- M.S. Goorsky
- et al.
- 1991
- Applied Physics Letters