N. Inoue, F. Ito, et al.
IITC 2013
The (buried) interface between a polycrystalline Al thin-film feature and its substrate (single crystal Si) was characterized with x-ray microdiffraction. Using a focused x-ray beam (effective spot size on the specimen ∼2×12 μm) with the Si 004 reflection, topographic images of the Si around and under the metallization feature were constructed. Comparison with shear-lag model calculations indicate that the interface is not fully coupled despite the absence of surface cracks. © 1998 American Institute of Physics.
N. Inoue, F. Ito, et al.
IITC 2013
J.L. Hedrick, S.A. Srinivasan, et al.
MRS Fall Meeting 1996
Guangyong Xu, D.E. Eastman, et al.
Journal of Applied Physics
R.F. Cook, E. Liniger
MRS Spring Meeting 1998