P.M. Mooney, J.L. Jordan-Sweet, et al.
Applied Physics Letters
The (buried) interface between a polycrystalline Al thin-film feature and its substrate (single crystal Si) was characterized with x-ray microdiffraction. Using a focused x-ray beam (effective spot size on the specimen ∼2×12 μm) with the Si 004 reflection, topographic images of the Si around and under the metallization feature were constructed. Comparison with shear-lag model calculations indicate that the interface is not fully coupled despite the absence of surface cracks. © 1998 American Institute of Physics.
P.M. Mooney, J.L. Jordan-Sweet, et al.
Applied Physics Letters
Andrew Ying, Christian Witt, et al.
Journal of Applied Physics
C. Lavoie, C. Cabral Jr., et al.
Journal of Electronic Materials
I.C. Noyan, L.T. Nguyen
Polymer Engineering & Science