Conference paper
A multilevel copper/low-k/airgap BEOL technology
S.V. Nitta, S. Ponoth, et al.
ADMETA 2007
The (buried) interface between a polycrystalline Al thin-film feature and its substrate (single crystal Si) was characterized with x-ray microdiffraction. Using a focused x-ray beam (effective spot size on the specimen ∼2×12 μm) with the Si 004 reflection, topographic images of the Si around and under the metallization feature were constructed. Comparison with shear-lag model calculations indicate that the interface is not fully coupled despite the absence of surface cracks. © 1998 American Institute of Physics.
S.V. Nitta, S. Ponoth, et al.
ADMETA 2007
L. Gignac, C.-K. Hu, et al.
Microelectronic Engineering
J.L. Jordan-Sweet, P.M. Mooney, et al.
MRS Fall Meeting 1994
C. Detavernier, A.S. Özcan, et al.
Nature