P. Nédellec, J. Lesueur, et al.
Journal of The Less-Common Metals
Small metal particles (SMP) have been incorporated into a multilayered metal-insulator-semiconductor structure consisting of thermally oxidized Si, SMP, a second insulator, and a top metal electrode. The SiO2 thickness is kept < 30 Å, permitting tunneling of charge carriers between the Si and the discrete states of the SMP. The charge thus stored on the SMP causes a large, controllable hysteresis in the capacitance-voltage characteristic of the structure which is described in terms of an energy-level model. © 1971 The American Institute of Physics.
P. Nédellec, J. Lesueur, et al.
Journal of The Less-Common Metals
J.R. Kirtley, R.M. Feenstra, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
A. Mansour, R.O. Hilleke, et al.
Physica B: Physics of Condensed Matter
C.P. Umbach, S. Washburn, et al.
International Conference on Low Temperature Physics (LT) 1983