Charge trapping in SiO₂/HfO₂ gate dielectrics: Comparison between charge-pumping and pulsed I_D-V_G

Charge-pumping (amplitude sweep) and the pulsed ID-V G technique have recently been introduced to study fast transient charging effects in alternative gate dielectrics. In this work, a detailed comparison between the two techniques is made using various experimental conditions. It is demonstrated that charge-pumping and pulsed I D-VG measurements yield equivalent results, when base level, charging times and device geometry are chosen carefully. © 2004 Elsevier B.V. All rights reserved.