E. Burstein
Ferroelectrics
Charge-pumping (amplitude sweep) and the pulsed ID-V G technique have recently been introduced to study fast transient charging effects in alternative gate dielectrics. In this work, a detailed comparison between the two techniques is made using various experimental conditions. It is demonstrated that charge-pumping and pulsed I D-VG measurements yield equivalent results, when base level, charging times and device geometry are chosen carefully. © 2004 Elsevier B.V. All rights reserved.
E. Burstein
Ferroelectrics
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
Ronald Troutman
Synthetic Metals