Fundamental aspects of HfO 2-based high-k metal gate stack reliability and implications on t inv-scaling
- E. Cartier
- Andreas Kerber
- et al.
- 2011
- IEDM 2011
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40 results for A. Kerber
Impact of TDDB in MG/HK devices on circuit functionality in advanced CMOS technologies
- Andreas Kerber
- D. Lipp
- et al.
- 2011
- IEDM 2011
A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications
- S. Krishnan
- U. Kwon
- et al.
- 2011
- IEDM 2011
Understanding mobility mechanisms in extremely scaled HfO2 (EOT 0.42 nm) using remote interfacial layer scavenging technique and V t-tuning dipoles with gate-first process
- T. Ando
- M.M. Frank
- et al.
- 2009
- IEDM 2009
Application of VRS methodology for the statistical assessment of BTI in MG/HK CMOS devices
- Andreas Kerber
- Eduard Cartier
- 2013
- IEEE Electron Device Letters
Voltage ramp stress for hot-carrier screening of scaled CMOS devices
- A. Kerber
- W. McMahon
- et al.
- 2012
- IEEE Electron Device Letters
A Fast four-point sense methodology for extraction of circuit-relevant degradation parameters
- Andreas Kerber
- Eduard Cartier
- 2010
- IEEE Electron Device Letters
Extraction of effective oxide thickness for SOI FINFETs with high-κ/Metal gates using the body effect
- Sujata Paul
- Frank Yeh
- et al.
- 2010
- IEEE Electron Device Letters
Voltage ramp stress for bias temperature instability testing of metal-gate/high- k stacks
- Andreas Kerber
- Siddarth A. Krishnan
- et al.
- 2009
- IEEE Electron Device Letters
Impact of band structure on charge trapping in thin SiO 2/Al 2O 3/poly-Si gate stacks
- L. Pantisano
- L. Lucci
- et al.
- 2004
- IEEE Electron Device Letters