Fundamental aspects of HfO 2-based high-k metal gate stack reliability and implications on t inv-scaling
- E. Cartier
- Andreas Kerber
- et al.
- 2011
- IEDM 2011
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
Date
Featured collections
Popular topics
40 results for A. Kerber
Impact of TDDB in MG/HK devices on circuit functionality in advanced CMOS technologies
- Andreas Kerber
- D. Lipp
- et al.
- 2011
- IEDM 2011
A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications
- S. Krishnan
- U. Kwon
- et al.
- 2011
- IEDM 2011
Understanding mobility mechanisms in extremely scaled HfO2 (EOT 0.42 nm) using remote interfacial layer scavenging technique and V t-tuning dipoles with gate-first process
- T. Ando
- M.M. Frank
- et al.
- 2009
- IEDM 2009
Application of VRS methodology for the statistical assessment of BTI in MG/HK CMOS devices
- Andreas Kerber
- Eduard Cartier
- 2013
- IEEE Electron Device Letters
Voltage ramp stress for hot-carrier screening of scaled CMOS devices
- A. Kerber
- W. McMahon
- et al.
- 2012
- IEEE Electron Device Letters
A Fast four-point sense methodology for extraction of circuit-relevant degradation parameters
- Andreas Kerber
- Eduard Cartier
- 2010
- IEEE Electron Device Letters
Extraction of effective oxide thickness for SOI FINFETs with high-κ/Metal gates using the body effect
- Sujata Paul
- Frank Yeh
- et al.
- 2010
- IEEE Electron Device Letters
Voltage ramp stress for bias temperature instability testing of metal-gate/high- k stacks
- Andreas Kerber
- Siddarth A. Krishnan
- et al.
- 2009
- IEEE Electron Device Letters
Impact of band structure on charge trapping in thin SiO 2/Al 2O 3/poly-Si gate stacks
- L. Pantisano
- L. Lucci
- et al.
- 2004
- IEEE Electron Device Letters