A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials
Chemically induced grain-boundary migration is demonstrated in polycrystalline silicon films. Growth of anomalously large grains, along with dopant depletion, is observed in P-doped polycrystalline Si films annealed at 700°C in the presence of a neighboring TiSi2 film. We propose a novel driving mechanism for migration here, an electrostatic force on the interface due to inhomogeneous dopant depletion. © 1988.
A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials
H.D. Dulman, R.H. Pantell, et al.
Physical Review B
P.C. Pattnaik, D.M. Newns
Physical Review B
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering