Submicron CMOS Gate Electrode Discontinuity: Electrical Signature and Effect on Circuit Speed
- Keith A. Jenkins
- J.N. Burghartz
- et al.
- 1993
- IEDM 1993
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34 results for C.Y. Wong
Role of charge transport and trapping in the reliability of submicron polysilicon thin film transistors
- Frank R. Libsch
- Catherine Y. Wong
- et al.
- 1991
- IEDM 1991
Doping of n+ and p+ polysilicon in a dual-gate CMOS process
- C.Y. Wong
- J.Y.-C. Sun
- et al.
- 1988
- IEDM 1988
Metal Migration into Polysilicon Emitter After Very High Current Stress
- Denny D. Tang
- Catherine Wong
- et al.
- 1992
- IEEE Electron Device Letters
BiCMOS Technology with 60-GHz n-p-n Bipolar and 0.25-μm CMOS
- James Warnock
- Ghavam G. Shahidi
- et al.
- 1992
- IEEE Electron Device Letters
Sidewall Oxidation of Polycrystalline-Silicon Gate
- Joseph Piccirillo
- Arup Bhattacharyya
- et al.
- 1989
- IEEE Electron Device Letters
A high performance 0.15 μm CMOS
- G. Shahidi
- J. Warnock
- et al.
- 1993
- VLSI Technology 1993
A high performance BiCMOS technology using 0.25 μm CMOS and double poly 47 GHz bipolar
- G. Shahidi
- J. Warnock
- et al.
- 1992
- VLSI Technology 1992
Mobile ion gettering in passivated P+ polysilicon gates
- C.Y. Wong
- C.C.-H. Hsu
- et al.
- 1990
- VLSI Technology 1990
Deep submicron silicon devices: Materials and processing issues
- C.Y. Wong
- Tak II. Ning
- 1990
- Silicon Materials Science and Technology 1990