R.W. Gammon, E. Courtens, et al.
Physical Review B
The pseudo-metal oxide semiconductor field effect transistor (ψ-MOSFET)is a quick method for detailed electrical characterization of bare silicon-on-insulator wafers. A recent variant consists in using circular Hg probes. A simple analytical model for the geometrical factor, which is of primary importance of circular ψ-MOSFET applications, is presented and validated by 3-D numerical simulations. Measurements on a SIMOX wafer in both accumulation and inversion are used to test the model.
R.W. Gammon, E. Courtens, et al.
Physical Review B
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992