Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
The pseudo-metal oxide semiconductor field effect transistor (ψ-MOSFET)is a quick method for detailed electrical characterization of bare silicon-on-insulator wafers. A recent variant consists in using circular Hg probes. A simple analytical model for the geometrical factor, which is of primary importance of circular ψ-MOSFET applications, is presented and validated by 3-D numerical simulations. Measurements on a SIMOX wafer in both accumulation and inversion are used to test the model.
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
Ming L. Yu
Physical Review B
Michiel Sprik
Journal of Physics Condensed Matter
J.A. Barker, D. Henderson, et al.
Molecular Physics