Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties

Paper

01 Jan 1993

Comment on arsenic precipitate coarsening in GaAs epilayers

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Abstract

No abstract available.

Paper

Brillouin scattering investigation of paraelectric KH2PO4 near the tricritical point

R.W. Gammon, E. Courtens, et al.

Physical Review B

Conference paper

High-performance sub-0.08 μm CMOS with dual gate oxide and 9.7 ps inverter delay

M. Hargrove, S.W. Crowder, et al.

IEDM 1998

Paper

Effect of electron correlation in a narrow band

K.A. Chao

Physical Review B

Paper

Arsenic precipitates in Al_0.3Ga_0.7As/GaAs multiple superlattice and quantum well structures

K. Mahalingam, N. Otsuka, et al.

Applied Physics Letters

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