Tailoring dielectric materials for robust BEOL reliability
G. Bonilla, T.M. Shaw, et al.
IRPS 2012
Chemical schemes for Si atomic layer epitaxy (ALE) are discussed using a two-step sequence of reactions: (1) surface chlorination, using a chlorosilane molecule, and (2) reduction (Cl removal), using atomic H or a silane molecule. The schemes are compared in terms of equilibrium thermodynamics, to select the most promising schemes. All of the proposed processes based on atomic H are spontaneous (thermodynamically downhill). Two reactions using Si2H6 are endothermic, but may be thermally driven at useful Si-growth temperatures, due to a large, positive entropy change for the reaction. © 1992 American Chemical Society.
G. Bonilla, T.M. Shaw, et al.
IRPS 2012
J.R. Heath, S. Gates, et al.
Applied Physics Letters
S. Gates
MRS Spring Meeting 1997
S. Gates, C.M. Greenlief, et al.
The Journal of Chemical Physics