Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry
Ruo2belongs to the group of transition metal dioxides which crystallize in tetragonal rutile structure and have low bulk metallic resistivities ranging from 30 to 100 μΩ-cm. Because of the thermal stability and excellent diffusion barrier properties, they deserve a special notice as metallization alternatives in a variety of VLSI applications. We will discuss our recent work on characterization of reactively sputtered films of RuO2and will specifically explore correlations between oxygen-induced stress and their microstructure and diffusion barrier properties. © 1988, The Electrochemical Society, Inc. All rights reserved.
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
H.D. Dulman, R.H. Pantell, et al.
Physical Review B
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting