R. Ghez, M.B. Small
JES
Ruo2belongs to the group of transition metal dioxides which crystallize in tetragonal rutile structure and have low bulk metallic resistivities ranging from 30 to 100 μΩ-cm. Because of the thermal stability and excellent diffusion barrier properties, they deserve a special notice as metallization alternatives in a variety of VLSI applications. We will discuss our recent work on characterization of reactively sputtered films of RuO2and will specifically explore correlations between oxygen-induced stress and their microstructure and diffusion barrier properties. © 1988, The Electrochemical Society, Inc. All rights reserved.
R. Ghez, M.B. Small
JES
J. Tersoff
Applied Surface Science
H.D. Dulman, R.H. Pantell, et al.
Physical Review B
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials