Conference paper
3.5ns CMOS 64K ECL RAM at 77°K
S.E. Schuster, T.I. Chappell, et al.
VLSI Circuits 1988
Nanosecond pulses from a focused nitrogen pumped dye laser have been used to connect and disconnect conductors on FET chips. Experiments on connections between n+ diffusion layers and aluminum, separated by an insulating layer of SiO2, show promise for high yield and reliability. The connections have Ohmic characteristics. Sectioned laser connections were examined with an electron microprobe and microscope in order to examine physical details of the connection process.
S.E. Schuster, T.I. Chappell, et al.
VLSI Circuits 1988
R.J. Von Gutfeld
Applied Physics Letters
R.J. Von Gutfeld, E.E. Tynan
Applied Physics Letters
R.J. Von Gutfeld, A.H. Nethercot Jr.
Journal of Applied Physics