R.J. Von Gutfeld, J.R. Lankard
Opto-electronics
Nanosecond pulses from a focused nitrogen pumped dye laser have been used to connect and disconnect conductors on FET chips. Experiments on connections between n+ diffusion layers and aluminum, separated by an insulating layer of SiO2, show promise for high yield and reliability. The connections have Ohmic characteristics. Sectioned laser connections were examined with an electron microprobe and microscope in order to examine physical details of the connection process.
R.J. Von Gutfeld, J.R. Lankard
Opto-electronics
P. Chaudhari, S.R. Herd, et al.
Journal of Non-Crystalline Solids
R.J. Von Gutfeld, D.R. Vigliotti
Applied Physics Letters
G. Shahidi, T.H. Ning, et al.
IEDM 1993