G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
Paper
Contact for shallow junctions
Abstract
A brief review of the formation process and Schottky behavior of shallow silicide contacts is presented. Both silicon alloys and refractory metal alloys have been explored for shallow silicide formation, and both high (0.85-0.75 eV) and low (0.50-0.40 eV) Schottky contacts have been demonstrated. © 1986.
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