Proceedings of the IEEE

Paper

01 Jan 1963

Continuous Stimulated Emission from GaAs Diodes at 77°K

View publication

Abstract

No abstract available.

Paper

Comparative study of minority electron properties in p⁺-GaAs doped with beryllium and carbon

M.L. Lovejoy, M.R. Melloch, et al.

Applied Physics Letters

Paper

Transport properties of a superconductor-semiconductor ohmic contact

A. Davidson, M.J. Brady, et al.

IEEE Transactions on Magnetics

Paper

InP/InGaAs double heterojunction bipolar transistors incorporating carbon-doped bases and superlattice graded base-collector junctions

R.C. Gee, C.L. Lin, et al.

Electronics Letters

Paper

Direct measurement of proton straggling in GaAlAs for nuclear profiling

A. Bond, P. Parayanthal, et al.

Journal of Applied Physics

View all publications