Efficient visible electroluminescence at 300°K from Ga 1-xAlxAs p-n junctions grown by liquid-phase epitaxy
- H. Rupprecht
- J. Woodall
- et al.
- 2004
- Applied Physics Letters
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18 results for H. Rupprecht
High-energy light emission from junctions in GaAsxP 1-x diodes
- N.G. Ainslie
- M.H. Pilkuhn
- et al.
- 2004
- Journal of Applied Physics
Diffusion of Zn into GaAs under the presence of excess arsenic vapor
- H. Rupprecht
- C.Z. Lemay
- 2004
- Journal of Applied Physics
Distribution of boron-induced defects in shallow diffused surface layers of silicon
- H. Rupprecht
- G.H. Schwuttke
- 2004
- Journal of Applied Physics
Electroluminescence and lasing action in GaAsxP1-x
- M.H. Pilkuhn
- H. Rupprecht
- 2004
- Journal of Applied Physics
Optical and electrical properties of epitaxial and diffused gaas injection lasers
- M.H. Pilkuhn
- H. Rupprecht
- 2004
- Journal of Applied Physics
Spontaneous and stimulated emission from gaas diodes with three-layer structures
- M.H. Pilkuhn
- H. Rupprecht
- 2004
- Journal of Applied Physics
Electron microscope studies of an alloyed Au/Ni/Au-Ge ohmic contact to GaAs
- T.S. Kuan
- P.E. Batson
- et al.
- 1983
- Journal of Applied Physics
Proximate capless annealing of GaAs using a controlled-excess As vapor pressure source
- J. Woodall
- H. Rupprecht
- et al.
- 1981
- Applied Physics Letters
IVA-7 Surface Layer Impurity Accumulation Due to Evaporation of GaAs During Annealing
- J. Woodall
- H. Rupprecht
- et al.
- 1981
- IEEE T-ED