Electroluminescence near band gap in gallium phosphide containing shallow donor and acceptor levels
- L.M. Foster
- M.H. Pilkuhn
- 2004
- Applied Physics Letters
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17 results for M.H. Pilkuhn
High-energy light emission from junctions in GaAsxP 1-x diodes
- N.G. Ainslie
- M.H. Pilkuhn
- et al.
- 2004
- Journal of Applied Physics
Electroluminescence and lasing action in GaAsxP1-x
- M.H. Pilkuhn
- H. Rupprecht
- 2004
- Journal of Applied Physics
Self-induced oscillations in the stimulated light emission from GaAs injection lasers
- R.S. Levitt
- M.H. Pilkuhn
- 2004
- Journal of Applied Physics
Luminescence from gap containing silicon
- M.R. Lorenz
- M.H. Pilkuhn
- 2004
- Journal of Applied Physics
Optical and electrical properties of epitaxial and diffused gaas injection lasers
- M.H. Pilkuhn
- H. Rupprecht
- 2004
- Journal of Applied Physics
Preparation and properties of solution-grown epitaxial p - N junctions in gap
- M.R. Lorenz
- M.H. Pilkuhn
- 2004
- Journal of Applied Physics
Spontaneous and stimulated emission from gaas diodes with three-layer structures
- M.H. Pilkuhn
- H. Rupprecht
- 2004
- Journal of Applied Physics
Slow surface relaxation of germanium
- M.H. Pilkuhn
- 2004
- Journal of Applied Physics
Resonant Raman study of Cl in CdS
- Peter Y. Yu
- M.H. Pilkuhn
- et al.
- 1978
- Solid State Communications