PaperFacet growth under stress: The limits of strained-layer stabilityJ. TersoffPhysical Review Letters
PaperHeterojunction band lineups in Si-Ge alloys using spatially resolved electron-energy-loss spectroscopyJ.F. Morar, P.E. Batson, et al.Physical Review B
PaperInteraction of threading and misfit dislocations in a strained epitaxial layerK.W. Schwarz, J. TersoffApplied Physics Letters
