R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
In this paper we report an in-depth analysis of a current crowding phenomenon in a 0.55um CMOS technology. Emission Microscopy (EMMI) technique was used to support the traditional electrical investigation for the interpretation of physical phenomena inside a MOS transistor. We identified a localized increase of the luminescence emission due to a local current crowding of the device under test. We ascribed the origins to a local higher electric field leading to an enhanced hot-carrier regime within the device. We carried out a detailed characterization by means of the joint use of photon emission analysis and electrical measurements. © 2004 Elsevier Ltd. All rights reserved.
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
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SPIE AeroSense 1997
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Physical Review B
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Synthetic Metals