T.W. Hickmott, P. Solomon, et al.
ICPS Physics of Semiconductors 1984
When impact ionization occurs, current runaway can arise in insulators, due to a regenerative effect between the rate of ionization and the rate of current injection at the cathode. Solving a set of conduction equations analytically, the critial field for current runaway F̄r was determined as a function of insulator properties, when the effect of impact ionizations is opposed by recombinations. Current transients were obtained by computer solutions for fields both smaller and larger than the critical field F̄r. The current transients can be used to determine the ionization coefficient and the recombination cross section. For fields larger than F̄r times to current runaway tr were found to decrease quasiexponentially with increasing field.
T.W. Hickmott, P. Solomon, et al.
ICPS Physics of Semiconductors 1984
J. Appenzeller, R. Martel, et al.
DRC 2001
P. Solomon, K.W. Guarini, et al.
IEEE Circuits and Devices Magazine
D.J. Frank, P. Solomon
ISLPED 1995