PaperOn the establishment of an inversion layer in p- and n-type silicon substrates under conditions of high oxide fieldsP. SolomonApplied Physics Letters
PaperDepletion-Mode GaAs SISFET's By Selective Ion ImplantationH. Baratte, Paul M. Solomon, et al.IEEE Electron Device Letters
Conference paperCalculating the error in long term oxide reliability estimatesB.P. Linder, J.H. Stathis, et al.IRPS 2001
Conference paperComparison of high speed voltage-scaled conventional and adiabatic circuitsD.J. FrankLPED 1996