PaperFrequency dependent characterization of transport properties in carbon nanotube transistorsJ. Appenzeller, D.J. FrankApplied Physics Letters
PaperResonant Fowler-Nordheim tunneling in n-GaAs-undoped Al xGa1-xAs-n+GaAs capacitorsT.W. Hickmott, P. Solomon, et al.Applied Physics Letters
Conference paperAn n-FET with a Si nanowire channel and doped epitaxially-thickened source and drain regionsG.M. Cohen, P. Solomon, et al.DRC 2007
PaperProcess Damage and Contamination Effects for Shallow Si Implanted GaAsH. Baratte, A.J. Fleischman, et al.JES
