Yuan Zhang, Simone Raoux, et al.
MRS Spring Meeting 2008
A local-bottom-gate (LBG) configuration is introduced for carbon nanotube array field-effect transistors (FETs) (CNTFETs). CNTFETs from highly aligned nanotubes are demonstrated and exhibit the best performance to date, with current density >40μA/μm (with no metallic nanotubes), inverse subthreshold slope of 70 mV/decade, and on/off-current ratio >105. Additionally, on-current from LBG-CNTFETs is shown to scale linearly with the number of nanotube channels. These advancements in device geometry and performance provide a new platform for further progress to be made toward high-performance FETs from aligned nanotubes. © 2010 IEEE.
Yuan Zhang, Simone Raoux, et al.
MRS Spring Meeting 2008
Aaron D. Franklin, George S. Tulevski, et al.
ACS Nano
Qing Cao, Shu Jen Han, et al.
Science
Jakub Kedzierski, Meikei Ieong, et al.
IEEE Transactions on Electron Devices