H.J. Hovel
IEEE International SOI Conference 1997
Evidence is presented to show that the degradation of near-band-gap photoluminescence emission in GaAs with time of exposure to low power, cw laser excitation can be attributed to a surface mechanism that is independent of surface oxidation and may involve an interaction between crystal point defects and the photogenerated electron-hole plasma near the surface.
H.J. Hovel
IEEE International SOI Conference 1997
H.J. Hovel
JES
H.J. Hovel
Journal of Applied Physics
H.J. Hovel
Solid-State Electronics