Conference paper
Effect of the back gate conduction on 0.25 μm SOI devices
J.L. Pelloie, D.K. Sadana, et al.
IEDM 1994
Evidence is presented to show that the degradation of near-band-gap photoluminescence emission in GaAs with time of exposure to low power, cw laser excitation can be attributed to a surface mechanism that is independent of surface oxidation and may involve an interaction between crystal point defects and the photogenerated electron-hole plasma near the surface.
J.L. Pelloie, D.K. Sadana, et al.
IEDM 1994
D.K. Sadana, S.W. Bedell, et al.
ECS Meeting 2005
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