B. Chen, A.S. Yapsir, et al.
ICSICT 1995
Evidence is presented to show that the degradation of near-band-gap photoluminescence emission in GaAs with time of exposure to low power, cw laser excitation can be attributed to a surface mechanism that is independent of surface oxidation and may involve an interaction between crystal point defects and the photogenerated electron-hole plasma near the surface.
B. Chen, A.S. Yapsir, et al.
ICSICT 1995
H.J. Hovel, R.T. Hodgson, et al.
IEEE T-ED
H.J. Hovel, J.J. Urgell
Journal of Applied Physics
A. Paccagnella, A.C. Callegari, et al.
IEEE T-ED