Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
We demonstrate that a large fraction of the available data relating the critical current density J, of superconducting Nb-A1Ox-Nb tunnel junctions to oxidation parameters can be accounted for by a single, nearly universal dependence. For fixed oxidation temperature, J, does not depend independently on oxygen partial pressure and oxidation time, but only on their product. There are two distinct regimes in this dependence, corresponding to high and low Jc. © 1995 IEEE
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
A. Gangulee, F.M. D'Heurle
Thin Solid Films
A. Krol, C.J. Sher, et al.
Surface Science
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JES