Publications

13 results for F.L. Pesavento

Parameter Dependence of RIE Induced Radiation Damage in Silicon Dioxide
- - L.M. Ephrarh
  - D.J. Dimaria
  - et al.
- 2019
- JES
Memories of tomorrow
- - William Reohr
  - Heinz Hönigschmid
  - et al.
- 2002
- IEEE Circuits and Devices Magazine
Measurement of history effect in PD/SOI single-ended CPL circuit
- - Keith A. Jenkins
  - R. Puri
  - et al.
- 2001
- IEEE International SOI Conference 2001
Schottky barriers of scandium and scandium monosilicide on silicon
- - F.M. d'Heurle
  - M.O. Aboelfotoh
  - et al.
- 1991
- Applied Surface Science
Characteristics of vertical p-channel MOSFETs for high density circuit application
- - D.S. Wen
  - W.H. Chang
  - et al.
- 1991
- VLSI-TSA 1991
Experimental 27 ns 1 Mb CMOS high-speed DRAM
- - S. Dhong
  - W.H. Henkels
  - et al.
- 1989
- VLSI Circuits 1989
A 22-ns 1-Mbit CMOS High-Speed DRAM with Address Multiplexing
- - Nicky C.C. Lu
  - Gary B. Bronner
  - et al.
- 1989
- IEEE Journal of Solid-State Circuits
Direct measurement of the energy distribution of hot electrons in silicon dioxide
- - S.D. Brorson
  - D.J. DiMaria
  - et al.
- 1985
- Journal of Applied Physics
Electron heating in silicon dioxide and off-stoichiometric silicon dioxide films
- - D.J. DiMaria
  - T.N. Theis
  - et al.
- 1985
- Journal of Applied Physics
Electroluminescence studies in silicon dioxide films containing tiny silicon islands
- - D.J. DiMaria
  - J.R. Kirtley
  - et al.
- 1984
- Journal of Applied Physics