Measurement of history effect in PD/SOI single-ended CPL circuit
- Keith A. Jenkins
- R. Puri
- et al.
- 2001
- IEEE International SOI Conference 2001
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13 results for F.L. Pesavento
Characteristics of vertical p-channel MOSFETs for high density circuit application
- D.S. Wen
- W.H. Chang
- et al.
- 1991
- VLSI-TSA 1991
Experimental 27 ns 1 Mb CMOS high-speed DRAM
- S. Dhong
- W.H. Henkels
- et al.
- 1989
- VLSI Circuits 1989
Parameter Dependence of RIE Induced Radiation Damage in Silicon Dioxide
- L.M. Ephrarh
- D.J. Dimaria
- et al.
- 2019
- JES
Memories of tomorrow
- William Reohr
- Heinz Hönigschmid
- et al.
- 2002
- IEEE Circuits and Devices Magazine
Schottky barriers of scandium and scandium monosilicide on silicon
- F.M. d'Heurle
- M.O. Aboelfotoh
- et al.
- 1991
- Applied Surface Science
A 22-ns 1-Mbit CMOS High-Speed DRAM with Address Multiplexing
- Nicky C.C. Lu
- Gary B. Bronner
- et al.
- 1989
- IEEE Journal of Solid-State Circuits
Electron heating in silicon dioxide and off-stoichiometric silicon dioxide films
- D.J. DiMaria
- T.N. Theis
- et al.
- 1985
- Journal of Applied Physics
Direct measurement of the energy distribution of hot electrons in silicon dioxide
- S.D. Brorson
- D.J. DiMaria
- et al.
- 1985
- Journal of Applied Physics
Electroluminescence studies in silicon dioxide films containing tiny silicon islands
- D.J. DiMaria
- J.R. Kirtley
- et al.
- 1984
- Journal of Applied Physics