Muhannad S. Bakir, Hollie A. Reed, et al.
IEEE Transactions on Electron Devices
A simple technique to optimize the device parameters of the retrograde channel doping MOSFET to minimize short channel effects for a constant threshold voltage is presented in this work. The results indicate that the highest possible substrate doping does not necessarily result in minimum short channel effects. © 1996 IEEE.
Muhannad S. Bakir, Hollie A. Reed, et al.
IEEE Transactions on Electron Devices
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