R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
This paper describes new types of organosilicon photoresists, sensitive throughout the ultraviolet region from 2000 to 45Å. The synthesis is based upon a simple condensation reaction of 3-aminopropyl-substituted polysiloxanes with photosensitive naphthoquinone diazosulfonyl chlorides. These polymers when used in bilayer systems are very sensitive, high contrast negative photoresists with sensitivities of about 10 mJ/cm2 at 4047Å and (γ) of 1.4. Because of the inorganic polysiloxane backbone, they are resistant to oxygen plasmas, with an etch rate ratio of 50:1 (photoresist/diazosiloxane), and they are thermally stable up to 400°C. The synthetic procedure, mechanisms of crosslinking and processing characteristics of these materials are discussed along with data concerning their resolution capabilities and lithographic applications. © 1986.
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
T. Schneider, E. Stoll
Physical Review B