U. Gösele, K.N. Tu
Journal of Applied Physics
Experimental results from the diffusion of Au in Si, which could not be explained before, in terms of the Frank-Turnbull mechanism involving vacancies, can be quantitatively understood with the assumption that the equilibrium between interstitial and substitutional Au is established via Si self-interstitials. The results suggest that these defects dominate diffusion in Si.
U. Gösele, K.N. Tu
Journal of Applied Physics
F.F. Morehead, G. Mandel
Applied Physics Letters
C. Thelander, P. Agarwal, et al.
Materials Today
U. Gösele, K.N. Tu, et al.
Journal of Applied Physics