M.Y. Tsai, F.F. Morehead, et al.
Journal of Applied Physics
Experimental results on the diffusion of Zn in GaAs which could not be satisfactorily explained in terms of a Frank-Turnbull mechanism involving vacancies can be understood with a "kick-out model" in which the equilibrium between interstitial and substitutional Zn is established via gallium interstitials.
M.Y. Tsai, F.F. Morehead, et al.
Journal of Applied Physics
C. Thelander, P. Agarwal, et al.
Materials Today
T.Y. Tan, U. Gösele, et al.
Applied Physics A Solids and Surfaces
F.F. Morehead, G. Mandel
Applied Physics Letters