Conference paper
mcplotgl: Graphics for the DAMOCLES Program
S.E. Laux, M.V. Fischetti
IEDM 1994
We describe the two-dimensional simulation of a bent resonant tunneling diode structure which displays vortices in its total current density pattern over a range of applied bias. In contrast, a double gate n-MOSFET is shown where such circulation exists in individual subband states but does not survive in the total current density solution. Both devices are simulated assuming ballistic quantum transport in Si at 300 K.
S.E. Laux, M.V. Fischetti
IEDM 1994
M.V. Fischetti, S.E. Laux
ESSDERC 1996
M.V. Fischetti, S.E. Laux
IEDM 1989
S.E. Laux, Robert G. Byrnes
IBM J. Res. Dev