Modeling effects of focused ion beams

Abstract

A zero-order model is used to estimate the effects associated with focused ion beams. We assume that the energetic ions introduce electronic states at a fixed distance from the surface and at a single energy. Lateral and vertical straggle are ignored. Effects of implant depth and implant dose are investigated and results for carrier depletion at the edge of an implanted sheet and for antidot structures are presented. Some results are for GaAs/AlGaAs heterostructures and some are for SiGe heterostructures.