H. Salemink, O. Albrektsen, et al.
Physical Review B
We report the first observation of GaAs/AlGaAs compound multilayers and interfaces at atomic scale resolution. Using a scanning tunneling microscope, the atomic registry in the epitaxial layers and their interfaces was observed. The semiconductor band gaps and valence-band offsets relative to the Fermi level are obtained via local spectroscopy in the GaAs and AlGaAs multilayers.
H. Salemink, O. Albrektsen, et al.
Physical Review B
H.A.J.M. Reinen, T.T.J.M. Berendschot, et al.
Superlattices and Microstructures
P. Guéret, C. Rossel, et al.
Journal of Applied Physics
D.J. Arent, L. Brovelli, et al.
Applied Physics Letters