Y.H. Lee, K.L. Wang, et al.
physica status solidi (a)
DX centers are found to cause the capacitance of an AlGaAs/GaAs p-n heterojunction at 77 K to behave like that of a p-i-n diode. Exposure to light causes the capacitance to behave like a normal p-n junction. It is argued that the presence of DX centers has only a small effect on the switching properties heterojunction bipolar transistors.
Y.H. Lee, K.L. Wang, et al.
physica status solidi (a)
P.M. Mooney, B.D. Parker, et al.
Applied Physics Letters
P.M. Mooney, J.O. Chu
Annual Review of Materials Science
J.E. Smith Jr., M.H. Brodsky, et al.
Physical Review Letters