Degradation of thin SiO 2 gate oxides by atomic hydrogen
F. Cartier, D.J. DiMaria, et al.
DRC 1994
We have observed an electron paramagnetic resonance signal corresponding to a neutral fourfold coordinated nitrogen in plasma-enhanced chemical vapor deposited SiO2 films fabricated under certain conditions. The same films contain E' centers (positive oxygen vacancies) in an equal quantity. Our data support a model in which these two paramagnetic centers are created simultaneously by an electron transfer, starting from a positive fourfold nitrogen and a neutral oxygen vacancy. This model allows an earlier observation of an apparently neutral E' variant to be interpreted as a normal positive E' plus a nitrogen center to conserve charge.
F. Cartier, D.J. DiMaria, et al.
DRC 1994
J.H. Stathis, D.J. DiMaria
Microelectronic Engineering
M.J. Uren, K.M. Brunson, et al.
Microelectronic Engineering
J.H. Stathis, S. Rigo, et al.
Solid State Communications