High-Quality Deposited Gate Oxide MOSFET’s and the Importance of Surface Preparation
- J.W. Stasiak
- J. Batey
- et al.
- 1989
- IEEE Electron Device Letters
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18 results for J. Batey
Thin-Film Transistors Incorporating a Thin, High-Quality PECVD SiO2 Gate Dielectric
- D.A. Buchanan
- J. Batey
- et al.
- 1988
- IEEE Electron Device Letters
Unpinned GaAs MOS Capacitors and Transistors
- Sandip Tiwari
- Steven L. Wright
- et al.
- 1988
- IEEE Electron Device Letters
Electrical Characteristics of Very Thin SiO2 Deposited at Low Substrate Temperatures
- J. Batey
- E. Tierney
- et al.
- 1987
- IEEE Electron Device Letters
Direct observation of ballistic electrons in silicon dioxide
- D.J. DiMaria
- M.V. Fischetti
- et al.
- 1986
- Physical Review Letters
Low hydrogen content stoichiometric silicon nitride films deposited by plasma-enhanced chemical vapor deposition
- G.N. Parsons
- J.H. Souk
- et al.
- 1991
- Journal of Applied Physics
Low-rate plasma oxidation of Si in a dilute oxygen/helium plasma for low-temperature gate quality Si/SiO2 interfaces
- A.A. Bright
- J. Batey
- et al.
- 1991
- Applied Physics Letters
Response to "comment on 'E' centers and nitrogen-related defects in silicon dioxide films'"
- J.H. Stathis
- J. Chapple-Sokol
- et al.
- 1991
- Applied Physics Letters
Properties and thermal stability of the SiO2/GaAs interface with different surface treatments
- A. Paccagnella
- A.C. Callegari
- et al.
- 1990
- Applied Physics Letters
E' centers and nitrogen-related defects in SiO2 films
- J.H. Stathis
- J. Chapple-Sokol
- et al.
- 1990
- Applied Physics Letters