High-Quality Deposited Gate Oxide MOSFET’s and the Importance of Surface Preparation
- J.W. Stasiak
- J. Batey
- et al.
- 1989
- IEEE Electron Device Letters
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19 results for E. Tierney
Thin-Film Transistors Incorporating a Thin, High-Quality PECVD SiO2 Gate Dielectric
- D.A. Buchanan
- J. Batey
- et al.
- 1988
- IEEE Electron Device Letters
Electrical Characteristics of Very Thin SiO2 Deposited at Low Substrate Temperatures
- J. Batey
- E. Tierney
- et al.
- 1987
- IEEE Electron Device Letters
Direct observation of ballistic electrons in silicon dioxide
- D.J. DiMaria
- M.V. Fischetti
- et al.
- 1986
- Physical Review Letters
Direct observation of the threshold for electron heating in silicon dioxide
- D.J. Dimaria
- M.V. Fischetti
- et al.
- 1986
- Physical Review Letters
On the Nature of CVD Si-Rich SiO2 and Si3N4 Films
- E.A. Irene
- N.J. Chou
- et al.
- 2019
- JES
Silicon Oxidation Studies: Morphological Aspects of the Oxidation of Polycrystalline Silicon
- E.A. Irene
- E. Tierney
- et al.
- 2019
- JES
An electron microscope investigation of the effect of phosphorous doping on the plasma etching of polycrystalline silicon
- E.A. Irene
- E. Tierney
- et al.
- 2019
- JES
Low-rate plasma oxidation of Si in a dilute oxygen/helium plasma for low-temperature gate quality Si/SiO2 interfaces
- A.A. Bright
- J. Batey
- et al.
- 1991
- Applied Physics Letters
Response to "comment on 'E' centers and nitrogen-related defects in silicon dioxide films'"
- J.H. Stathis
- J. Chapple-Sokol
- et al.
- 1991
- Applied Physics Letters