Tak H. Ning
IEEE Transactions on Electron Devices
This letter discusses the effect of off-axis implant on the characteristics of advanced self-aligned bipolar transistors utilizing a sidewall-spacer technology, Experimental results are presented to show that as a result of offsetting the base profile with respect to the emitter profile due to the sidewall shadowing effect, the 7° off-axis implant causes orientation-dependent perimeter punchthrough at one of the emitter edges and orientation-dependent perimeter tunneling at the other emitter edge. Copyright © 1987 by The Institute of Electrical and Electronics Engineers, Inc.
Tak H. Ning
IEEE Transactions on Electron Devices
Jin Cai, Tak H. Ning, et al.
IEEE J-EDS
Charles C.-H. Hsu, Duen-Shun Wen, et al.
IEEE Transactions on Electron Devices
T.C. Chen, J.D. Cressler, et al.
VLSI Technology 1989