Increasing the Current Driving Capability of Epitaxial Schottky-Barrier Diodes Using High-Energy Implantation

A high-energy (350 keV) phosphorus implant has been used to enhance the current driving capability of Pt Si high-barrier Schottky diodes via a reduction in the series resistance of the epitaxial layer as well as a minute change in the barrier height. Devices made on a 0.7-um 2.0 x 1016cm-3epitaxial layer exhibit well-controlled near-ideal characteristics with an implant dose of 2.5 x 1012ions/cm2. Higher 265es result in wide-spread degraded device characteristics. © 1985 IEEE