Conference paper
Sub-50 ps single poly planar bipolar technology
T.C. Chen, D.D. Tang, et al.
IEDM 1988
Experiments were performed on n+-p-n and p+-n+-p transistors to examine the effect of boron impurity compensation on the hole current injected into the heavily arsenic-doped n-type silicon. The result shows that the impurity compensation significantly enhances the hole current only at low temperature, and has little effect at room or higher temperatures. Copyright © 1980 by The Institute of Electrical and Electronics Engineers, Inc.
T.C. Chen, D.D. Tang, et al.
IEDM 1988
D.D. Tang, Paul M. Solomon
IEEE JSSC
M.Y. Tsai, F.F. Morehead, et al.
Journal of Applied Physics
Alwin E. Michel, Marshall I. Nathan
Applied Physics Letters