Conference paper
Silicon-on-sapphire for RF Si systems 2000
I. Lagnado, P.R. De La Houssaye, et al.
SiRF 2000
In this letter, we report germanium (Ge) p-channel MOSFETs with a thin gate stack of Ge oxynitride and low-temperature oxide (LTO) on bulk Ge substrate without a silicon (Si) cap layer. The fabricated devices show 2 × higher transconductance and ∼ 40% hole mobility enhancement over the Si control with a thermal SiO2 gate dielectric, as well as the excellent subthreshold characteristics. For the first time, we demonstrate Ge MOSFETs with less than 100-mV/dec subthreshold slope.
I. Lagnado, P.R. De La Houssaye, et al.
SiRF 2000
S.J. Koester, R. Hammond, et al.
IEEE Electron Device Letters
D. Fried, J. Hergenrother, et al.
IEDM 2004
M.J. Rooks, G.M. Cohen, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures