Conference paper
Silicon-on-insulator MOSFETs with hybrid crystal orientations
M. Yang, K.K. Chan, et al.
VLSI Technology 2006
In this letter, we report germanium (Ge) p-channel MOSFETs with a thin gate stack of Ge oxynitride and low-temperature oxide (LTO) on bulk Ge substrate without a silicon (Si) cap layer. The fabricated devices show 2 × higher transconductance and ∼ 40% hole mobility enhancement over the Si control with a thermal SiO2 gate dielectric, as well as the excellent subthreshold characteristics. For the first time, we demonstrate Ge MOSFETs with less than 100-mV/dec subthreshold slope.
M. Yang, K.K. Chan, et al.
VLSI Technology 2006
K. Rim, R. Anderson, et al.
Solid-State Electronics
Marwan Khater, J. Cai, et al.
VLSI Technology 2010
S.J. Koester, R. Hammond, et al.
EDMO 1999