M.J. Rooks, G.M. Cohen, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Paper
Electrical characterization of germanium p-channel MOSFETs
Abstract
In this letter, we report germanium (Ge) p-channel MOSFETs with a thin gate stack of Ge oxynitride and low-temperature oxide (LTO) on bulk Ge substrate without a silicon (Si) cap layer. The fabricated devices show 2 × higher transconductance and ∼ 40% hole mobility enhancement over the Si control with a thermal SiO2 gate dielectric, as well as the excellent subthreshold characteristics. For the first time, we demonstrate Ge MOSFETs with less than 100-mV/dec subthreshold slope.
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