William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
We review the topic of self-assembled endotaxial silicide nanowires on silicon. Crystallographic orientation, lattice mismatch and average dimensions are discussed for a variety of systems including Ti, Mn, Fe, Co, Ni, Pt and several rare earths on Si(100), Si(111) and Si(110) surfaces. In situ observations of growth dynamics support a constant-shape growth model, in which length, width and thickness all change in proportion as the nanowire grows, with thermally activated, facet-dependent rates. © 2011 Elsevier B.V. All rights reserved.
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
John G. Long, Peter C. Searson, et al.
JES
Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules
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SPIE Advanced Lithography 2007