A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials
Paper
Enhanced secondary electron injection in novel SiGe flash memory devices
Abstract
2-D MonteCarlo (MC) simulations were used to explore the property of silicon germinium (SiGe) layers to control and enhance channel-initiated secondary electron (CHISEL) gate current. Novel SiGe flash memory cells showed a 4X enhancement in CHESEL gate current for both planar and vertical 0.18μtechnology.