Etch pits and dislocations in {100} GaAs wafers

J. Angilello; R.M. Potemski; G.R. Woolhouse

doi:10.1063/1.321833

Journal of Applied Physics

Paper

02 Sep 2008

Etch pits and dislocations in {100} GaAs wafers

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Abstract

The reliability of molten KOH for revealing dislocations intersecting {100} faces of GaAs has been tested using transmission x-ray topography. It is found to be a "faithful" etch.

Paper

Wave morphologies on the surfaces of GaAs and Ga_0.65Al_0.35As grown LPE

M.B. Small, R.M. Potemski

Journal of Crystal Growth

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The formation of Ga_1-xAl_xAs layers on the surface of GaAs during continual dissolution into Ga-Al-As solutions

M.B. Small, R. Ghez, et al.

Applied Physics Letters

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Some properties of chemically vapor deposited films of Al_xO_yN_z on silicon

E.A. Irene, V.J. Silvestri, et al.

Journal of Electronic Materials

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Epitaxial Growth of GaAs with (C₂H₅)₂GaCl and AsH₃ in a Hotwall Reactor

T.F. Kuech, M.A. Tischler, et al.

JES

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Abstract

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