Etch pits and dislocations in {100} GaAs wafers

J. Angilello; R.M. Potemski; G.R. Woolhouse

doi:10.1063/1.321833

Journal of Applied Physics

Paper

02 Sep 2008

Etch pits and dislocations in {100} GaAs wafers

View publication

Abstract

The reliability of molten KOH for revealing dislocations intersecting {100} faces of GaAs has been tested using transmission x-ray topography. It is found to be a "faithful" etch.

Paper

Contact reaction between Si and Pd-W alloy films

J.O. Olowolafe, K.N. Tu, et al.

Journal of Applied Physics

Paper

The effect of surface preparation on the production of low interfacial charge regrown interfaces

T.F. Kuech, E.D. Marshall, et al.

Journal of Crystal Growth

Paper

Effect of doping on degradation of GaAsSingle Bond signAl_x Ga_1-xAs injection lasers

P.G. McMullin, J.M. Blum, et al.

Applied Physics Letters

Paper

The formation of Ga_1-xAl_xAs layers on the surface of GaAs during continual dissolution into Ga-Al-As solutions

M.B. Small, R. Ghez, et al.

Applied Physics Letters

View all publications

Abstract

Related

Contact reaction between Si and Pd-W alloy films

The effect of surface preparation on the production of low interfacial charge regrown interfaces

Effect of doping on degradation of GaAsSingle Bond signAlx Ga1-xAs injection lasers

The formation of Ga1-xAlxAs layers on the surface of GaAs during continual dissolution into Ga-Al-As solutions

Effect of doping on degradation of GaAsSingle Bond signAl_x Ga_1-xAs injection lasers

The formation of Ga_1-xAl_xAs layers on the surface of GaAs during continual dissolution into Ga-Al-As solutions