Etch pits and dislocations in {100} GaAs wafers

J. Angilello; R.M. Potemski; G.R. Woolhouse

doi:10.1063/1.321833

Journal of Applied Physics

Paper

02 Sep 2008

Etch pits and dislocations in {100} GaAs wafers

View publication

Abstract

The reliability of molten KOH for revealing dislocations intersecting {100} faces of GaAs has been tested using transmission x-ray topography. It is found to be a "faithful" etch.

Paper

Characterization of silicon implanted GaAs buffer layers grown by metalorganic chemical vapor deposition

Paper

Properties of high-purity Al_xGa_1-xAs grown by the metalorganic vapor-phase-epitaxy technique using methyl precursors

Paper

Quantitative oxygen measurements in OMVPE Al_x Ga_1-x As grown by methyl precursors

Paper

Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy

View all publications

Abstract

Related

Characterization of silicon implanted GaAs buffer layers grown by metalorganic chemical vapor deposition

Properties of high-purity AlxGa1-xAs grown by the metalorganic vapor-phase-epitaxy technique using methyl precursors

Quantitative oxygen measurements in OMVPE Al x Ga1-x As grown by methyl precursors

Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy

Properties of high-purity Al_xGa_1-xAs grown by the metalorganic vapor-phase-epitaxy technique using methyl precursors

Quantitative oxygen measurements in OMVPE Al_x Ga_1-x As grown by methyl precursors