Etch pits and dislocations in {100} GaAs wafers

J. Angilello; R.M. Potemski; G.R. Woolhouse

doi:10.1063/1.321833

Journal of Applied Physics

Paper

02 Sep 2008

Etch pits and dislocations in {100} GaAs wafers

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Abstract

The reliability of molten KOH for revealing dislocations intersecting {100} faces of GaAs has been tested using transmission x-ray topography. It is found to be a "faithful" etch.

Paper

Epitaxial growth of GaAs with (C₂H₅)₂GaCl and AsH₃ in a hot-wall system

Paper

Magnesium gallate spinel: A substrate for the direct liquid-phase epitaxial growth of (Ga,Al)As

Conference paper

AUTOMATED MICRODENSITOMETER FOR DIGITIZING ASTRONOMICAL PLATES.

Paper

Dependence of the Al_xGa_1-xAs band edge on alloy composition based on the absolute measurement of x

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Abstract

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Epitaxial growth of GaAs with (C2H5)2GaCl and AsH3 in a hot-wall system

Magnesium gallate spinel: A substrate for the direct liquid-phase epitaxial growth of (Ga,Al)As

AUTOMATED MICRODENSITOMETER FOR DIGITIZING ASTRONOMICAL PLATES.

Dependence of the AlxGa1-xAs band edge on alloy composition based on the absolute measurement of x

Epitaxial growth of GaAs with (C₂H₅)₂GaCl and AsH₃ in a hot-wall system

Dependence of the Al_xGa_1-xAs band edge on alloy composition based on the absolute measurement of x