Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
Experiments on CeP, CeAs, and CeBi have revealed two 4f-derived photoemission features at binding energies of 0.6 eV [FWHM (full width at half maximum)0.7 eV] and 3.0-3.1 eV (FWHM 1.0 eV) due to competing Ce 4f photoionization channels. The relative intensity of the two spectral features changes by 10 from CeP to CeBi. These findings indicate strong f-p hybridization and force a reevaluation of previous 4f binding energies in Ce compounds. © 1981 The American Physical Society.
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
David B. Mitzi
Journal of Materials Chemistry
A. Gangulee, F.M. D'Heurle
Thin Solid Films
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films