R.J. Von Gutfeld, R.T. Hodgson
Applied Physics Letters
The non-thermal, pulsed plasma model of laser annealing was experimentally tested by comparing the effects of 30 ns and 1 μs laser pulses on silicon on sapphire films, impinging from both the front and rear surfaces. The energy density needed to anneal the films and the qualitative behavior of thermal shock damages are in accordance with the simple heating model and inconsistent with the non-thermal model. © 1980.
R.J. Von Gutfeld, R.T. Hodgson
Applied Physics Letters
A. Deutsch, H. Smith, et al.
IEEE Topical Meeting EPEPS 1998
A. Deutsch, H. Smith, et al.
IEEE Topical Meeting EPEPS 1997
C.F. Dewey Jr., W.R. Cook Jr., et al.
Applied Physics Letters