Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
Steady state and switching behavior of single luminescence filaments in a-BaTiO3/ZnS/a-BaTiO3 ac thin film electroluminescence devices have been studied. The brightness-voltage amplitude hysteresis, or memory effect, of these devices results from the ensemble behavior of luminescing filaments that are bistable in their luminescence level. A trap depth of 1-1.2eV is estimated on the assumption that the voltage threshold for luminescence involves electric field emission from traps. The temperature dependence of electroluminescence near the threshold voltage is investigated. © 1979 AIME.
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
A. Gangulee, F.M. D'Heurle
Thin Solid Films
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry