Gen Tsutsui, Seunghyun Song, et al.
IEDM 2022
Charge pumping is one of the most relied techniques used to quantify interface defects in metal-oxide-semiconductor devices. However, conventional charge pumping is easily hindered by excessive gate leakage currents, which render the technique unsuitable for advanced technology nodes. We demonstrate a new frequency-modulated charge pumping methodology in which we transform the quasi-dc charge pumping measurement into an ac measurement. The ac detection scheme is highly resistant to gate leakage currents and extends the usefulness of charge pumping as a defect monitoring tool for future technologies.
Gen Tsutsui, Seunghyun Song, et al.
IEDM 2022
Narendra Parihar, Uma Sharma, et al.
IRPS 2019
Tenko Yamashita, S. Mehta, et al.
VLSI Technology 2015
Ruqiang Bao, K. Watanabe, et al.
VLSI Technology 2020